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RJK0701DPP-E0#T2

Renesas Electronics America Inc
RJK0701DPP-E0#T2 Preview
Renesas Electronics America Inc
MOSFET N-CH 75V 100A TO220FP
$3.55
Available to order
Reference Price (USD)
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$3.55000
500+
$3.5145
1000+
$3.479
1500+
$3.4435
2000+
$3.408
2500+
$3.3725
Exquisite packaging
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Renesas Electronics America Inc RJK0701DPP-E0#T2 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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RJK0701DPP-E0#T2

RJK0701DPP-E0#T2

$3.55

Product details

Elevate your electronic designs with the RJK0701DPP-E0#T2 single MOSFET transistor from Renesas Electronics America Inc, a premium offering in the Discrete Semiconductor Products market (Transistors - FETs, MOSFETs - Single). This high-performance component delivers exceptional power handling capabilities combined with efficient switching characteristics. The RJK0701DPP-E0#T2 features advanced semiconductor architecture that ensures minimal energy loss and optimal thermal management. Its design incorporates protective features that enhance reliability in demanding operating conditions. The MOSFET demonstrates excellent performance in automotive electronics, particularly in engine control units, lighting systems, and battery management solutions. Industrial applications include motor drives, power tools, and factory automation equipment. For renewable energy systems, it's particularly effective in wind power converters and solar tracking mechanisms. The component also finds significant use in high-end computing applications and data storage systems. With its combination of power efficiency and robust construction, the RJK0701DPP-E0#T2 provides design engineers with a versatile solution for various power management challenges. To discover how this MOSFET can benefit your specific application, we encourage you to submit an online inquiry. Our knowledgeable staff will provide detailed product information and purchasing options to meet your project requirements and timeline.

General specs

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Rds On (Max) @ Id, Vgs: 3.8mOhm @ 50A, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
  • Vgs (Max): -
  • Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 10 V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack

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