RJK03P9DPA-00#J5A
Renesas Electronics America Inc
Renesas Electronics America Inc
POWER, N-CHANNEL MOSFET
$1.36
Available to order
Reference Price (USD)
1+
$1.36000
500+
$1.3464
1000+
$1.3328
1500+
$1.3192
2000+
$1.3056
2500+
$1.292
Exquisite packaging
Discount
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Product details
General specs
- Product Status: Obsolete
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Logic Level Gate, 4.5V Drive
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 20A, 50A
- Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1660pF @ 10V
- Power - Max: 15W, 35W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-WFDFN Exposed Pad
- Supplier Device Package: 8-WPAK