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RJH60M1DPE-00#J3

Renesas Electronics America Inc
RJH60M1DPE-00#J3 Preview
Renesas Electronics America Inc
IGBT 600V 16A 52W LDPAK
$2.14
Available to order
Reference Price (USD)
1,000+
$1.10199
2,000+
$1.02599
5,000+
$1.01332
Exquisite packaging
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RJH60M1DPE-00#J3

RJH60M1DPE-00#J3

$2.14

Product details

Experience unparalleled power control with the RJH60M1DPE-00#J3 single IGBT transistor by Renesas Electronics America Inc. This high-efficiency component is perfect for applications in industrial automation, renewable energy, and automotive systems. The RJH60M1DPE-00#J3 boasts low energy loss and high switching frequency, making it a top choice for modern power electronics. Its robust design ensures long-term reliability even under high stress and temperature variations. Whether you're designing for high-power or compact systems, the RJH60M1DPE-00#J3 offers the flexibility and performance you need. Submit your inquiry online to learn more about this advanced IGBT transistor.

General specs

  • Product Status: Obsolete
  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 16 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 8A
  • Power - Max: 52 W
  • Switching Energy: 80µJ (on), 90µJ (off)
  • Input Type: Standard
  • Gate Charge: 20.5 nC
  • Td (on/off) @ 25°C: 30ns/55ns
  • Test Condition: 300V, 8A, 5Ohm, 15V
  • Reverse Recovery Time (trr): 100 ns
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-83
  • Supplier Device Package: LDPAK

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