RAA220002GNP#HA0
Renesas Electronics America Inc
Renesas Electronics America Inc
BUCK MOSFET DRIVER 12LD 3X3 EP T
$0.55
Available to order
Reference Price (USD)
1+
$0.55110
500+
$0.545589
1000+
$0.540078
1500+
$0.534567
2000+
$0.529056
2500+
$0.523545
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
| DHL / Fedex / UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
Renesas Electronics America Inc RAA220002GNP#HA0 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
RAA220002GNP#HA0
$0.55
Product details
The RAA220002GNP#HA0 by Renesas Electronics America Inc is a high-efficiency PMIC - Gate Driver designed for demanding power electronics applications. This advanced IC provides robust gate driving capability for MOSFETs, IGBTs, and wide-bandgap devices. The RAA220002GNP#HA0 features intelligent control algorithms that optimize switching behavior for different load conditions. Its innovative design minimizes propagation delay while maintaining excellent noise immunity. The gate driver's adaptive dead-time control prevents shoot-through currents in half-bridge and full-bridge configurations. For data center power supplies, the RAA220002GNP#HA0 enables high-efficiency power conversion with precise voltage regulation. In industrial robotics, it provides reliable control for precision motion systems. The component also excels in electric vehicle charging stations, supporting fast and efficient power delivery. The RAA220002GNP#HA0 incorporates advanced thermal monitoring that enhances system reliability in high-temperature environments. Its configurable drive strength allows optimization for different power device characteristics. The gate driver's comprehensive protection features include desaturation detection and soft shutdown capabilities. These characteristics make it particularly suitable for aerospace power distribution systems and satellite electronics. The RAA220002GNP#HA0 also performs exceptionally in high-power ultrasound generators and medical imaging equipment. Its small footprint and high integration level enable compact power supply designs. The device supports multiple control interfaces for flexible system integration. With its combination of performance and protection features, the RAA220002GNP#HA0 is an ideal solution for critical power management applications. Contact our sales team today to discuss your specific requirements and receive expert product recommendations. Submit your inquiry online for prompt technical support and pricing information.
General specs
- Product Status: Active
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 6V ~ 13.2V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): -
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 36 V
- Rise / Fall Time (Typ): 31ns, 18ns
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 12-WFDFN Exposed Pad
- Supplier Device Package: 12-TDFN (3x3)
Viewed products