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R1RW0408DGE-2LR#B1

Renesas Electronics America Inc
R1RW0408DGE-2LR#B1 Preview
Renesas Electronics America Inc
IC SRAM 4MBIT PARALLEL 36SOJ
$16.03
Available to order
Reference Price (USD)
1+
$16.03200
500+
$15.87168
1000+
$15.71136
1500+
$15.55104
2000+
$15.39072
2500+
$15.2304
Exquisite packaging
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Renesas Electronics America Inc R1RW0408DGE-2LR#B1 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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R1RW0408DGE-2LR#B1

R1RW0408DGE-2LR#B1

$16.03

Product details

The R1RW0408DGE-2LR#B1 from Renesas Electronics America Inc is a high-performance memory IC designed for demanding applications. This versatile memory solution offers reliable data storage and fast access times, making it ideal for a wide range of electronic systems. With its advanced architecture, the R1RW0408DGE-2LR#B1 ensures efficient operation in both industrial and commercial environments. Key features include low power consumption, robust data retention, and seamless integration with various host systems. The memory IC supports multiple read/write operations without compromising performance, ensuring smooth operation in data-intensive scenarios. Its compact design allows for easy implementation in space-constrained applications while maintaining high reliability. Applications span across industries, including automotive electronics for infotainment systems, industrial automation for data logging, and consumer electronics for smart devices. The R1RW0408DGE-2LR#B1 is also suitable for medical equipment requiring secure data storage and telecommunications infrastructure needing high-speed memory solutions. For pricing and availability of this Renesas Electronics America Inc memory IC, please submit your inquiry through our online platform. Our team will provide you with competitive quotes and technical support to meet your project requirements.

General specs

  • Product Status: Active
  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM
  • Memory Size: 4Mb (512K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 12ns
  • Access Time: 12 ns
  • Voltage - Supply: 3V ~ 3.6V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 36-BSOJ (0.400", 10.16mm Width)
  • Supplier Device Package: 36-SOJ

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