R1RP0416DGE-2PR#B1
Renesas Electronics America Inc
Renesas Electronics America Inc
IC SRAM 4MBIT PARALLEL 44SOJ
$15.70
Available to order
Reference Price (USD)
1+
$15.69796
500+
$15.5409804
1000+
$15.3840008
1500+
$15.2270212
2000+
$15.0700416
2500+
$14.913062
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
| DHL / Fedex / UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
Renesas Electronics America Inc R1RP0416DGE-2PR#B1 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
R1RP0416DGE-2PR#B1
$15.70
Product details
The R1RP0416DGE-2PR#B1 by Renesas Electronics America Inc represents the next generation of memory IC technology, offering unparalleled performance for data-intensive applications. This memory solution combines high density with rapid access capabilities, providing system designers with flexible options for various architectural requirements. Its advanced interface ensures compatibility with modern processors and controllers.
Notable features include enhanced security protocols to protect sensitive data, multi-level cell technology for efficient storage, and adaptive power management for energy-sensitive applications. The R1RP0416DGE-2PR#B1 demonstrates exceptional endurance characteristics, making it suitable for applications with frequent read/write cycles. Its architecture supports seamless scaling for future system upgrades.
This memory IC finds perfect application in AI accelerator cards, high-performance computing clusters, and data center storage arrays. It's equally effective in automotive ADAS systems, 5G network infrastructure, and industrial robotics requiring real-time data processing. The R1RP0416DGE-2PR#B1 also serves well in advanced medical imaging equipment and scientific instrumentation.
To explore how this Renesas Electronics America Inc memory IC can optimize your design, submit your inquiry through our digital platform. We offer comprehensive support from technical consultation to volume pricing for the R1RP0416DGE-2PR#B1 memory solution.
General specs
- Product Status: Active
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM
- Memory Size: 4Mb (256K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 12ns
- Access Time: 12 ns
- Voltage - Supply: 4.5V ~ 5.5V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-BSOJ (0.400", 10.16mm Width)
- Supplier Device Package: 44-SOJ
Viewed products
