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R1RP0416DGE-2LR#B1

Renesas Electronics America Inc
R1RP0416DGE-2LR#B1 Preview
Renesas Electronics America Inc
IC SRAM 4MBIT PARALLEL 44SOJ
$16.03
Available to order
Reference Price (USD)
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$16.03204
500+
$15.8717196
1000+
$15.7113992
1500+
$15.5510788
2000+
$15.3907584
2500+
$15.230438
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Renesas Electronics America Inc R1RP0416DGE-2LR#B1 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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R1RP0416DGE-2LR#B1

R1RP0416DGE-2LR#B1

$16.03

Product details

Enhance your system's performance with the R1RP0416DGE-2LR#B1 memory IC from Renesas Electronics America Inc, a cutting-edge solution for modern data storage needs. This memory product delivers exceptional speed and reliability, engineered to meet the rigorous demands of today's electronic applications. Its innovative design ensures optimal performance in various operating conditions. The R1RP0416DGE-2LR#B1 boasts features such as extended endurance, wide operating voltage range, and excellent temperature stability. These characteristics make it particularly suitable for applications requiring consistent performance under challenging environmental conditions. The memory IC maintains data integrity even during power fluctuations, providing peace of mind for critical systems. Ideal applications include aerospace avionics systems, military communication equipment, and industrial control units. The R1RP0416DGE-2LR#B1 also excels in IoT devices requiring persistent memory and enterprise storage solutions demanding high capacity. Its versatility extends to renewable energy systems where reliable data storage is crucial for operation monitoring. Contact us today through our online inquiry system to learn more about the R1RP0416DGE-2LR#B1 and how it can benefit your specific application. Our experts are ready to assist with technical details and procurement options for this Renesas Electronics America Inc memory solution.

General specs

  • Product Status: Active
  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM
  • Memory Size: 4Mb (256K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 12ns
  • Access Time: 12 ns
  • Voltage - Supply: 4.5V ~ 5.5V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-BSOJ (0.400", 10.16mm Width)
  • Supplier Device Package: 44-SOJ

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