Shopping cart

Subtotal: $0.00

NE68030-T1-A

Renesas
NE68030-T1-A Preview
Renesas
SAME AS 2SC4228 NPN SILICON AMPL
$2.00
Available to order
Reference Price (USD)
1+
$2.00000
500+
$1.98
1000+
$1.96
1500+
$1.94
2000+
$1.92
2500+
$1.9
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Renesas NE68030-T1-A is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
NE68030-T1-A

NE68030-T1-A

$2.00

Product details

Renesas presents the NE68030-T1-A a high-reliability RF BJT transistor engineered for critical discrete semiconductor applications. This bipolar junction transistor delivers superior phase linearity and dynamic range performance essential for modern communication systems. Its advanced epitaxial base structure minimizes transit time effects while maintaining excellent current handling capacity. The product features a gold metallization system for optimal contact reliability and corrosion resistance. Engineers will appreciate the well-defined S-parameters and consistent high-frequency characteristics across production lots. Primary implementations include military-grade encrypted communication devices and electronic warfare systems. Commercial applications span point-to-point radio links and cellular small cell infrastructure deployments. In the medical field, it enables precise signal generation in therapeutic ultrasound devices and MRI gradient amplifiers. The NE68030-T1-A also serves vital functions in industrial process control systems and automated test equipment. Its compatibility with both leaded and surface-mount assembly processes provides design flexibility. Renesas employs rigorous screening protocols to ensure military-specification compliance where required. The transistor comes with complete characterization data and application-specific performance guidelines. Access our online design support tools including impedance matching calculators and thermal modeling software. Contact our technical sales team for assistance selecting the optimal NE68030-T1-A variant for your RF power amplification requirements.

General specs

  • Product Status: Last Time Buy
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 1.9dB @ 2GHz
  • Gain: 7.5dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 3V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323

Viewed products

Infineon Technologies

BFP650FH6327XTSA1

$0.00 (not set)
Infineon Technologies

BFS17PE6327HTSA1

$0.00 (not set)
Infineon Technologies

BFP843H6327XTSA1

$0.00 (not set)
Infineon Technologies

BFR35APE6327

$0.00 (not set)
Rohm Semiconductor

2SC4774T106S

$0.00 (not set)
Infineon Technologies

BFR340FH6327XTSA1

$0.00 (not set)
NTE Electronics, Inc

NTE237

$0.00 (not set)
NTE Electronics, Inc

NTE235

$0.00 (not set)
NXP USA Inc.

BFU725F/N1,115

$0.00 (not set)
MACOM Technology Solutions

MAPR-002729-170M00

$0.00 (not set)
Top