NE651R479A-T1-A
Renesas Electronics America Inc
Renesas Electronics America Inc
N-CHANNEL 8V 1A GAAS HFET
$7.34
Available to order
Reference Price (USD)
1+
$7.34000
500+
$7.2666
1000+
$7.1932
1500+
$7.1198
2000+
$7.0464
2500+
$6.973
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
| DHL / Fedex / UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
Renesas Electronics America Inc NE651R479A-T1-A is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
NE651R479A-T1-A
$7.34
Product details
Enhance your RF circuitry with the NE651R479A-T1-A RF MOSFET transistor from Renesas Electronics America Inc, a standout in the discrete semiconductor products market. This transistor is specifically designed for high-frequency applications, offering unmatched performance and reliability. The NE651R479A-T1-A features advanced FET technology that ensures low noise and high gain, critical for sensitive RF systems. Its efficient power handling capabilities make it suitable for both transmitting and receiving applications. The transistor's robust design guarantees long-term stability and durability. With excellent thermal characteristics, the NE651R479A-T1-A maintains performance even under continuous operation. Its compact form factor allows for seamless integration into space-constrained designs. The NE651R479A-T1-A is perfect for applications requiring precise signal amplification and control. Key benefits include superior switching speed, minimal signal loss, and high impedance matching. These features make it ideal for use in telecommunications infrastructure, satellite communication systems, and military-grade electronics. Additionally, it is well-suited for IoT devices, test and measurement equipment, and aerospace applications. The NE651R479A-T1-A delivers consistent results across diverse operating environments. Engineers can rely on its precision and efficiency for critical RF tasks. Renesas Electronics America Inc has engineered this MOSFET to meet the highest industry standards. For projects demanding top-tier RF performance, the NE651R479A-T1-A is an excellent choice. Don't miss the opportunity to incorporate this high-quality transistor into your designs. Visit our website to request a quote or submit an inquiry today. Experience the difference with the NE651R479A-T1-A from Renesas Electronics America Inc.
General specs
- Product Status: Obsolete
- Transistor Type: HFET
- Frequency: 1.9GHz
- Gain: 12dB
- Voltage - Test: 3.5 V
- Current Rating (Amps): 1A
- Noise Figure: -
- Current - Test: 50 mA
- Power - Output: 27dBm
- Voltage - Rated: 8 V
- Package / Case: 4-SMD, Flat Leads
- Supplier Device Package: 79A
Viewed products
