NE3515S02-T1D-A
Renesas Electronics America Inc
Renesas Electronics America Inc
SMALL SIGNAL N-CHANNEL MOSFET
$0.67
Available to order
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$0.6566
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$0.6499
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$0.6432
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$0.6365
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NE3515S02-T1D-A
$0.67
Product details
Maximize your RF capabilities with the NE3515S02-T1D-A RF MOSFET transistor from Renesas Electronics America Inc, a leader in discrete semiconductor products. This high-frequency transistor is designed for exceptional amplification and signal fidelity. Its advanced FET technology ensures minimal noise and maximum efficiency. The NE3515S02-T1D-A handles high power levels with outstanding thermal management. With high gain and linearity, it is perfect for demanding RF circuits. The transistor's durable construction guarantees reliability in harsh conditions. Its compact size allows for seamless integration into various electronic systems. The NE3515S02-T1D-A is ideal for applications requiring stable and efficient RF performance. Key benefits include fast switching, low signal loss, and high impedance matching. These features make it suitable for use in 5G networks, satellite communication, and defense electronics. It is also effective in consumer devices, automotive systems, and industrial monitoring. The NE3515S02-T1D-A ensures consistent operation across a wide frequency range. Renesas Electronics America Inc has engineered this MOSFET to surpass industry standards. For cutting-edge RF technology, the NE3515S02-T1D-A is an excellent choice. Enhance your designs with this high-performance transistor. Request a quote or submit an inquiry online now. Rely on the NE3515S02-T1D-A from Renesas Electronics America Inc for superior RF solutions.
General specs
- Product Status: Obsolete
- Transistor Type: HFET
- Frequency: 12GHz
- Gain: 12.5dB
- Voltage - Test: 2 V
- Current Rating (Amps): 88mA
- Noise Figure: 0.3dB
- Current - Test: 10 mA
- Power - Output: 14dBm
- Voltage - Rated: 4 V
- Package / Case: 4-SMD, Flat Leads
- Supplier Device Package: S02
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