NE3513M04-T2B-A
Renesas Electronics America Inc
Renesas Electronics America Inc
SMALL SIGNAL N-CHANNEL MOSFET
$0.89
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NE3513M04-T2B-A
$0.89
Product details
Enhance your RF circuitry with the NE3513M04-T2B-A RF MOSFET transistor from Renesas Electronics America Inc, a standout in the discrete semiconductor products market. This transistor is specifically designed for high-frequency applications, offering unmatched performance and reliability. The NE3513M04-T2B-A features advanced FET technology that ensures low noise and high gain, critical for sensitive RF systems. Its efficient power handling capabilities make it suitable for both transmitting and receiving applications. The transistor's robust design guarantees long-term stability and durability. With excellent thermal characteristics, the NE3513M04-T2B-A maintains performance even under continuous operation. Its compact form factor allows for seamless integration into space-constrained designs. The NE3513M04-T2B-A is perfect for applications requiring precise signal amplification and control. Key benefits include superior switching speed, minimal signal loss, and high impedance matching. These features make it ideal for use in telecommunications infrastructure, satellite communication systems, and military-grade electronics. Additionally, it is well-suited for IoT devices, test and measurement equipment, and aerospace applications. The NE3513M04-T2B-A delivers consistent results across diverse operating environments. Engineers can rely on its precision and efficiency for critical RF tasks. Renesas Electronics America Inc has engineered this MOSFET to meet the highest industry standards. For projects demanding top-tier RF performance, the NE3513M04-T2B-A is an excellent choice. Don't miss the opportunity to incorporate this high-quality transistor into your designs. Visit our website to request a quote or submit an inquiry today. Experience the difference with the NE3513M04-T2B-A from Renesas Electronics America Inc.
General specs
- Product Status: Obsolete
- Transistor Type: N-Channel GaAs HJ-FET
- Frequency: 12GHz
- Gain: 13dB
- Voltage - Test: 2 V
- Current Rating (Amps): 60mA
- Noise Figure: 0.65dB
- Current - Test: 10 mA
- Power - Output: 125mW
- Voltage - Rated: 4 V
- Package / Case: 4-SMD, Flat Leads
- Supplier Device Package: 4-Super Mini Mold
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