ISL89165FBEBZ
Renesas Electronics America Inc
Renesas Electronics America Inc
IC GATE DRVR LOW-SIDE 8SOIC
$4.97
Available to order
Reference Price (USD)
1+
$3.87000
10+
$3.47500
98+
$3.28500
196+
$2.84699
294+
$2.70099
588+
$2.42361
1,078+
$2.04400
2,548+
$1.94180
5,096+
$1.86880
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ISL89165FBEBZ
$4.97
Product details
Experience superior power management with the ISL89165FBEBZ PMIC - Gate Driver from Renesas Electronics America Inc. This high-performance IC is engineered to deliver precise control for power semiconductor devices in various conversion topologies. The ISL89165FBEBZ features an advanced architecture that optimizes switching performance while minimizing energy losses. Its intelligent drive strength adjustment ensures optimal gate control under different operating conditions. The gate driver's robust design includes comprehensive protection against voltage spikes and transient conditions. In solar microinverters, the ISL89165FBEBZ enables efficient power conversion with maximum energy harvest. For industrial motor control, it provides reliable switching for variable frequency drives and servo systems. The component also excels in medical power supplies, where clean and stable operation is essential. The ISL89165FBEBZ incorporates active Miller clamp functionality that prevents unwanted turn-on in bridge configurations. Its configurable turn-on/off speeds allow designers to balance between efficiency and EMI performance. The gate driver's low quiescent current makes it suitable for always-on applications requiring energy efficiency. These features make it ideal for building automation systems and smart grid infrastructure. The ISL89165FBEBZ also performs exceptionally in high-power RF amplifiers and particle accelerator power supplies. Its isolated design meets stringent safety requirements for high-voltage applications. The device supports various control interfaces, including isolated and non-isolated options. With its combination of performance and reliability, the ISL89165FBEBZ is a versatile solution for challenging power management applications. Our technical experts are ready to assist with your design integration - visit our website to submit your inquiry and access comprehensive product resources.
General specs
- Product Status: Active
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 4.5V ~ 16V
- Logic Voltage - VIL, VIH: 1.85V, 3.15V
- Current - Peak Output (Source, Sink): 6A, 6A
- Input Type: Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 20ns, 20ns
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package: 8-SOIC-EP
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