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HN58V66AT10E

Renesas
HN58V66AT10E Preview
Renesas
HN58V66 - PARALLEL 64KBIT EEPROM
$9.32
Available to order
Reference Price (USD)
1+
$9.32000
500+
$9.2268
1000+
$9.1336
1500+
$9.0404
2000+
$8.9472
2500+
$8.854
Exquisite packaging
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HN58V66AT10E

HN58V66AT10E

$9.32

Product details

Introducing the HN58V66AT10E from Renesas, a high-reliability memory IC designed for next-generation electronic systems. This memory solution offers exceptional data integrity and access speeds, catering to the most demanding application requirements. Its architecture is optimized for both performance and power efficiency in diverse operating environments. Key characteristics include sector-based protection mechanisms, rapid erase/write cycles, and extended data retention periods. The HN58V66AT10E incorporates intelligent power management features that automatically adjust to system requirements, maximizing energy efficiency without sacrificing performance. Its robust design ensures operation stability across various voltage conditions. The memory IC excels in applications such as autonomous vehicle perception systems, industrial IoT gateways, and enterprise SSD storage. It's equally effective in augmented reality devices, satellite communication equipment, and factory automation controllers. The HN58V66AT10E also serves well in smart city infrastructure and portable military communication devices. For detailed technical information and purchasing options for this Renesas memory solution, please use our online inquiry system. We offer flexible supply chain solutions and application engineering support for the HN58V66AT10E to ensure successful implementation in your design.

General specs

  • Product Status: Active
  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -

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