HIP2103FRTAAZ-T
Renesas Electronics America Inc
Renesas Electronics America Inc
IC GATE DRVR HALF-BRIDGE 8TDFN
$1.45
Available to order
Reference Price (USD)
6,000+
$0.93600
Exquisite packaging
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HIP2103FRTAAZ-T
$1.45
Product details
The HIP2103FRTAAZ-T by Renesas Electronics America Inc sets new standards in PMIC - Gate Driver technology, offering unparalleled efficiency for power electronics applications. This high-speed gate driver IC delivers precise timing control and robust drive capability, making it suitable for both low and high-power systems. Its innovative design incorporates multiple protection features that safeguard against overcurrent, undervoltage, and thermal overload conditions. The HIP2103FRTAAZ-T excels in applications requiring fast switching frequencies while maintaining minimal cross-conduction. The device's adaptive gate drive voltage ensures optimal performance across different operating conditions, contributing to overall system efficiency. For wireless charging systems, this gate driver provides the necessary control for efficient power transfer. It's equally effective in industrial welding equipment, where reliable switching is essential. The HIP2103FRTAAZ-T also proves invaluable in server power supplies, enhancing energy conversion efficiency. The gate driver's isolated design makes it particularly suitable for high-voltage applications, including traction inverters for electric vehicles. Additional applications include plasma generation systems and high-intensity discharge lighting. With its configurable features, the HIP2103FRTAAZ-T allows designers to tailor performance parameters to specific application requirements. The device supports multiple control interfaces for seamless integration into digital power management systems. Its low propagation delay ensures accurate timing in high-frequency switching applications. For designers seeking a reliable, high-performance gate driver solution, the HIP2103FRTAAZ-T offers the perfect combination of features and flexibility. Contact our technical sales team today to discuss how this component can optimize your power management design. Submit your inquiry through our online portal for prompt response and detailed product information.
General specs
- Product Status: Active
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 4.5V ~ 14V
- Logic Voltage - VIL, VIH: 1.63V, 2.06V
- Current - Peak Output (Source, Sink): 1A, 1A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 60 V
- Rise / Fall Time (Typ): 8ns, 2ns
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-WDFN Exposed Pad
- Supplier Device Package: 8-TDFN (3x3)
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