HIP2101IR4ZT
Renesas Electronics America Inc
Renesas Electronics America Inc
IC GATE DRVR HALF-BRIDGE 12DFN
$2.82
Available to order
Reference Price (USD)
6,000+
$1.79200
Exquisite packaging
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HIP2101IR4ZT
$2.82
Product details
The HIP2101IR4ZT by Renesas Electronics America Inc is a high-efficiency PMIC - Gate Driver designed for demanding power electronics applications. This advanced IC provides robust gate driving capability for MOSFETs, IGBTs, and wide-bandgap devices. The HIP2101IR4ZT features intelligent control algorithms that optimize switching behavior for different load conditions. Its innovative design minimizes propagation delay while maintaining excellent noise immunity. The gate driver's adaptive dead-time control prevents shoot-through currents in half-bridge and full-bridge configurations. For data center power supplies, the HIP2101IR4ZT enables high-efficiency power conversion with precise voltage regulation. In industrial robotics, it provides reliable control for precision motion systems. The component also excels in electric vehicle charging stations, supporting fast and efficient power delivery. The HIP2101IR4ZT incorporates advanced thermal monitoring that enhances system reliability in high-temperature environments. Its configurable drive strength allows optimization for different power device characteristics. The gate driver's comprehensive protection features include desaturation detection and soft shutdown capabilities. These characteristics make it particularly suitable for aerospace power distribution systems and satellite electronics. The HIP2101IR4ZT also performs exceptionally in high-power ultrasound generators and medical imaging equipment. Its small footprint and high integration level enable compact power supply designs. The device supports multiple control interfaces for flexible system integration. With its combination of performance and protection features, the HIP2101IR4ZT is an ideal solution for critical power management applications. Contact our sales team today to discuss your specific requirements and receive expert product recommendations. Submit your inquiry online for prompt technical support and pricing information.
General specs
- Product Status: Active
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 9V ~ 14V
- Logic Voltage - VIL, VIH: 0.8V, 2.2V
- Current - Peak Output (Source, Sink): 2A, 2A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 114 V
- Rise / Fall Time (Typ): 10ns, 10ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 12-VFDFN Exposed Pad
- Supplier Device Package: 12-DFN (4x4)
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