HIP2101IBZT
Renesas Electronics America Inc
Renesas Electronics America Inc
IC GATE DRVR HALF-BRIDGE 8SOIC
$4.58
Available to order
Reference Price (USD)
2,500+
$1.79550
5,000+
$1.72800
Exquisite packaging
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HIP2101IBZT
$4.58
Product details
The HIP2101IBZT from Renesas Electronics America Inc is a premium PMIC - Gate Driver solution designed for high-efficiency power conversion systems. This advanced IC delivers precise control for power switches, enabling optimal performance in various applications. The HIP2101IBZT features a unique combination of high drive current capability and low power consumption, making it suitable for both high-power and energy-sensitive designs. Its intelligent thermal management system ensures reliable operation under varying load conditions. The gate driver's adaptive timing control minimizes switching losses while preventing cross-conduction. For electric vehicle powertrains, the HIP2101IBZT provides robust control for traction inverters and onboard chargers. It's equally effective in industrial UPS systems, where reliable power conversion is critical. The component also excels in high-power LED lighting drivers, enabling efficient dimming control. The HIP2101IBZT incorporates advanced diagnostic features that facilitate system monitoring and maintenance. Its configurable output stages accommodate different power device technologies and gate drive requirements. The gate driver's excellent noise immunity makes it suitable for operation in electrically noisy environments. These characteristics are particularly valuable for welding equipment and plasma cutting systems. The HIP2101IBZT also performs exceptionally in high-frequency resonant converters used in induction cooking applications. Its small form factor and high integration level simplify PCB layout while reducing overall system size. The device supports multiple control interfaces for flexible system integration. With its comprehensive protection features and reliable performance, the HIP2101IBZT is an excellent choice for demanding power electronics applications. Contact our sales team today to discuss your specific requirements and receive personalized product recommendations. Submit your inquiry through our website for prompt response and detailed technical information.
General specs
- Product Status: Active
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 9V ~ 14V
- Logic Voltage - VIL, VIH: 0.8V, 2.2V
- Current - Peak Output (Source, Sink): 2A, 2A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 114 V
- Rise / Fall Time (Typ): 10ns, 10ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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