Shopping cart

Subtotal: $0.00

HFA3128R

Renesas Electronics America Inc
HFA3128R Preview
Renesas Electronics America Inc
RF TRANS 5 PNP 15V 5.5GHZ 16QFN
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Renesas Electronics America Inc HFA3128R is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
HFA3128R

HFA3128R

$0.00

Product details

Renesas Electronics America Inc presents the HFA3128R a high-reliability RF BJT transistor engineered for critical discrete semiconductor applications. This bipolar junction transistor delivers superior phase linearity and dynamic range performance essential for modern communication systems. Its advanced epitaxial base structure minimizes transit time effects while maintaining excellent current handling capacity. The product features a gold metallization system for optimal contact reliability and corrosion resistance. Engineers will appreciate the well-defined S-parameters and consistent high-frequency characteristics across production lots. Primary implementations include military-grade encrypted communication devices and electronic warfare systems. Commercial applications span point-to-point radio links and cellular small cell infrastructure deployments. In the medical field, it enables precise signal generation in therapeutic ultrasound devices and MRI gradient amplifiers. The HFA3128R also serves vital functions in industrial process control systems and automated test equipment. Its compatibility with both leaded and surface-mount assembly processes provides design flexibility. Renesas Electronics America Inc employs rigorous screening protocols to ensure military-specification compliance where required. The transistor comes with complete characterization data and application-specific performance guidelines. Access our online design support tools including impedance matching calculators and thermal modeling software. Contact our technical sales team for assistance selecting the optimal HFA3128R variant for your RF power amplification requirements.

General specs

  • Product Status: Obsolete
  • Transistor Type: 5 PNP
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 5.5GHz
  • Noise Figure (dB Typ @ f): 3.5dB @ 1GHz
  • Gain: -
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 2V
  • Current - Collector (Ic) (Max): 65mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-VFQFN Exposed Pad
  • Supplier Device Package: 16-QFN (3x3)

Viewed products

NXP USA Inc.

BFG505/X,235

$0.00 (not set)
CEL

2SC5010-T1-A

$0.00 (not set)
CEL

NE678M04-T2-A

$0.00 (not set)
CEL

NE462M02-T1-AZ

$0.00 (not set)
NXP USA Inc.

BFQ540,115

$0.00 (not set)
CEL

2SC5015-A

$0.00 (not set)
Fairchild Semiconductor

FPNH10

$0.00 (not set)
CEL

NE85639R-T1

$0.00 (not set)
CEL

2SC5753-A

$0.00 (not set)
Toshiba Semiconductor and Storage

2SC5086-O,LF

$0.00 (not set)
Top