71V67603S133BGGI
Renesas Electronics America Inc
Renesas Electronics America Inc
IC SRAM 9MBIT PARALLEL 119PBGA
$24.83
Available to order
Reference Price (USD)
84+
$19.50560
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
| DHL / Fedex / UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
Renesas Electronics America Inc 71V67603S133BGGI is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
71V67603S133BGGI
$24.83
Product details
Introducing the 71V67603S133BGGI from Renesas Electronics America Inc, a high-reliability memory IC designed for next-generation electronic systems. This memory solution offers exceptional data integrity and access speeds, catering to the most demanding application requirements. Its architecture is optimized for both performance and power efficiency in diverse operating environments.
Key characteristics include sector-based protection mechanisms, rapid erase/write cycles, and extended data retention periods. The 71V67603S133BGGI incorporates intelligent power management features that automatically adjust to system requirements, maximizing energy efficiency without sacrificing performance. Its robust design ensures operation stability across various voltage conditions.
The memory IC excels in applications such as autonomous vehicle perception systems, industrial IoT gateways, and enterprise SSD storage. It's equally effective in augmented reality devices, satellite communication equipment, and factory automation controllers. The 71V67603S133BGGI also serves well in smart city infrastructure and portable military communication devices.
For detailed technical information and purchasing options for this Renesas Electronics America Inc memory solution, please use our online inquiry system. We offer flexible supply chain solutions and application engineering support for the 71V67603S133BGGI to ensure successful implementation in your design.
General specs
- Product Status: Active
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous, SDR
- Memory Size: 9Mb (256K x 36)
- Memory Interface: Parallel
- Clock Frequency: 133 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 4.2 ns
- Voltage - Supply: 3.135V ~ 3.465V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 119-BGA
- Supplier Device Package: 119-PBGA (14x22)
Viewed products
