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71V65903S80BG8

Renesas Electronics America Inc
71V65903S80BG8 Preview
Renesas Electronics America Inc
IC SRAM 9MBIT PARALLEL 119PBGA
$22.71
Available to order
Reference Price (USD)
1,000+
$14.01908
Exquisite packaging
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TNT 2-6 days
EMS 3-7 days

Renesas Electronics America Inc 71V65903S80BG8 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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71V65903S80BG8

71V65903S80BG8

$22.71

Product details

The 71V65903S80BG8 memory IC from Renesas Electronics America Inc provides a robust storage solution for mission-critical data applications. This high-reliability product offers excellent performance characteristics, designed to meet the evolving needs of advanced electronic systems. Its architecture supports both high-density storage and rapid data access requirements. Key attributes include error detection and correction functionality, extended lifecycle endurance, and wide operating voltage range. The 71V65903S80BG8 incorporates advanced security features to protect sensitive information while maintaining high-speed operation. Its design ensures compatibility with various host interfaces for flexible system integration. Primary application sectors include defense systems, nuclear power plant controls, and emergency communication networks. The memory IC also excels in railway signaling systems, oil and gas monitoring equipment, and marine navigation devices. Its reliability makes it suitable for seismic monitoring stations and critical infrastructure protection systems. For complete technical details and purchasing information about this Renesas Electronics America Inc memory solution, please submit your inquiry online. Our specialists will provide expert guidance on implementing the 71V65903S80BG8 in your specific application, along with competitive pricing options.

General specs

  • Product Status: Active
  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous, SDR (ZBT)
  • Memory Size: 9Mb (512K x 18)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 8 ns
  • Voltage - Supply: 3.135V ~ 3.465V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 119-BGA
  • Supplier Device Package: 119-PBGA (14x22)

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