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71V65703S80BQI

Renesas Electronics America Inc
71V65703S80BQI Preview
Renesas Electronics America Inc
IC SRAM 9MBIT PARALLEL 165CABGA
$24.83
Available to order
Reference Price (USD)
272+
$16.54460
Exquisite packaging
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Renesas Electronics America Inc 71V65703S80BQI is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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71V65703S80BQI

71V65703S80BQI

$24.83

Product details

Renesas Electronics America Inc's 71V65703S80BQI represents a breakthrough in memory IC technology, offering unprecedented performance for data storage applications. This advanced solution combines high-speed operation with exceptional reliability, meeting the stringent requirements of modern electronic systems. Its architecture is designed for seamless integration and future scalability. Notable features include simultaneous read/write capability, power-loss data protection, and adaptive refresh technology. The 71V65703S80BQI supports multiple operating modes to optimize performance for specific application requirements. Its robust design ensures data integrity even in electrically noisy environments, making it suitable for industrial applications. The memory IC is ideal for use in financial transaction systems, emergency response equipment, and high-security access control. It also performs exceptionally well in video surveillance systems, e-mobility controllers, and agricultural automation devices. The 71V65703S80BQI serves aerospace applications requiring radiation-tolerant memory and underwater exploration equipment needing pressure-resistant solutions. Explore the capabilities of this Renesas Electronics America Inc memory IC by submitting your inquiry through our digital platform. We offer technical specifications, application notes, and customized procurement solutions for the 71V65703S80BQI to support your project development cycle.

General specs

  • Product Status: Active
  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous, SDR (ZBT)
  • Memory Size: 9Mb (256K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 8 ns
  • Voltage - Supply: 3.135V ~ 3.465V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-TBGA
  • Supplier Device Package: 165-CABGA (13x15)

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