71V424S10YG
Renesas Electronics America Inc
Renesas Electronics America Inc
IC SRAM 4MBIT PARALLEL 36SOJ
$6.71
Available to order
Reference Price (USD)
1+
$3.95000
20+
$3.58000
40+
$3.50225
60+
$3.48283
100+
$3.12350
260+
$3.11188
500+
$2.99728
1,000+
$2.84965
Exquisite packaging
Discount
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| TNT | 2-6 days |
| EMS | 3-7 days |
Renesas Electronics America Inc 71V424S10YG is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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71V424S10YG
$6.71
Product details
The 71V424S10YG memory IC from Renesas Electronics America Inc provides a robust storage solution for mission-critical data applications. This high-reliability product offers excellent performance characteristics, designed to meet the evolving needs of advanced electronic systems. Its architecture supports both high-density storage and rapid data access requirements.
Key attributes include error detection and correction functionality, extended lifecycle endurance, and wide operating voltage range. The 71V424S10YG incorporates advanced security features to protect sensitive information while maintaining high-speed operation. Its design ensures compatibility with various host interfaces for flexible system integration.
Primary application sectors include defense systems, nuclear power plant controls, and emergency communication networks. The memory IC also excels in railway signaling systems, oil and gas monitoring equipment, and marine navigation devices. Its reliability makes it suitable for seismic monitoring stations and critical infrastructure protection systems.
For complete technical details and purchasing information about this Renesas Electronics America Inc memory solution, please submit your inquiry online. Our specialists will provide expert guidance on implementing the 71V424S10YG in your specific application, along with competitive pricing options.
General specs
- Product Status: Obsolete
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 4Mb (512K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 10ns
- Access Time: 10 ns
- Voltage - Supply: 3V ~ 3.6V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 36-BSOJ (0.400", 10.16mm Width)
- Supplier Device Package: 36-SOJ
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