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71V416L10BE

Renesas Electronics America Inc
71V416L10BE Preview
Renesas Electronics America Inc
IC SRAM 4MBIT PARALLEL 48CABGA
$7.08
Available to order
Reference Price (USD)
250+
$5.46620
Exquisite packaging
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DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Renesas Electronics America Inc 71V416L10BE is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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71V416L10BE

71V416L10BE

$7.08

Product details

The 71V416L10BE memory IC from Renesas Electronics America Inc provides a robust storage solution for mission-critical data applications. This high-reliability product offers excellent performance characteristics, designed to meet the evolving needs of advanced electronic systems. Its architecture supports both high-density storage and rapid data access requirements. Key attributes include error detection and correction functionality, extended lifecycle endurance, and wide operating voltage range. The 71V416L10BE incorporates advanced security features to protect sensitive information while maintaining high-speed operation. Its design ensures compatibility with various host interfaces for flexible system integration. Primary application sectors include defense systems, nuclear power plant controls, and emergency communication networks. The memory IC also excels in railway signaling systems, oil and gas monitoring equipment, and marine navigation devices. Its reliability makes it suitable for seismic monitoring stations and critical infrastructure protection systems. For complete technical details and purchasing information about this Renesas Electronics America Inc memory solution, please submit your inquiry online. Our specialists will provide expert guidance on implementing the 71V416L10BE in your specific application, along with competitive pricing options.

General specs

  • Product Status: Active
  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 4Mb (256K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ns
  • Access Time: 10 ns
  • Voltage - Supply: 3V ~ 3.6V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFBGA
  • Supplier Device Package: 48-CABGA (9x9)

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