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71256S35DB

Renesas Electronics America Inc
71256S35DB Preview
Renesas Electronics America Inc
IC SRAM 256KBIT PAR 28CERDIP
$31.70
Available to order
Reference Price (USD)
130+
$21.12077
Exquisite packaging
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Renesas Electronics America Inc 71256S35DB is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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71256S35DB

71256S35DB

$31.70

Product details

Introducing the 71256S35DB from Renesas Electronics America Inc, a high-reliability memory IC designed for next-generation electronic systems. This memory solution offers exceptional data integrity and access speeds, catering to the most demanding application requirements. Its architecture is optimized for both performance and power efficiency in diverse operating environments. Key characteristics include sector-based protection mechanisms, rapid erase/write cycles, and extended data retention periods. The 71256S35DB incorporates intelligent power management features that automatically adjust to system requirements, maximizing energy efficiency without sacrificing performance. Its robust design ensures operation stability across various voltage conditions. The memory IC excels in applications such as autonomous vehicle perception systems, industrial IoT gateways, and enterprise SSD storage. It's equally effective in augmented reality devices, satellite communication equipment, and factory automation controllers. The 71256S35DB also serves well in smart city infrastructure and portable military communication devices. For detailed technical information and purchasing options for this Renesas Electronics America Inc memory solution, please use our online inquiry system. We offer flexible supply chain solutions and application engineering support for the 71256S35DB to ensure successful implementation in your design.

General specs

  • Product Status: Last Time Buy
  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 35ns
  • Access Time: 35 ns
  • Voltage - Supply: 4.5V ~ 5.5V
  • Operating Temperature: -55°C ~ 125°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 28-CDIP (0.600", 15.24mm)
  • Supplier Device Package: 28-CDIP

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