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70V639S12BF

Renesas Electronics America Inc
70V639S12BF Preview
Renesas Electronics America Inc
IC SRAM 2.25MBIT PAR 208CABGA
$155.78
Available to order
Reference Price (USD)
14+
$93.99929
Exquisite packaging
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Renesas Electronics America Inc 70V639S12BF is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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70V639S12BF

70V639S12BF

$155.78

Product details

Discover the 70V639S12BF by Renesas Electronics America Inc, a high-efficiency memory IC engineered for next-generation computing platforms. This innovative solution delivers superior performance metrics, combining speed, capacity, and power optimization in a single package. Its architecture is tailored for both embedded and expandable memory applications. The 70V639S12BF features include dynamic frequency scaling, bank interleaving support, and thermal throttling capability. These advanced features enable optimal performance across various operating conditions. The memory IC offers excellent signal integrity at high speeds while maintaining low power consumption. Its design incorporates reliability enhancements for continuous operation. Ideal applications include hyperscale data centers, AI inference accelerators, and autonomous mobile robots. The 70V639S12BF is equally effective in virtual reality systems, genomic sequencing equipment, and quantum computing interfaces. Its capabilities extend to smart agriculture systems and renewable energy management platforms requiring high-performance memory solutions. To learn more about integrating this Renesas Electronics America Inc memory IC into your design, submit your inquiry through our online portal. Our application engineers will provide technical support and procurement options for the 70V639S12BF, ensuring optimal memory performance for your specific requirements.

General specs

  • Product Status: Active
  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 2.25Mb (128K x 18)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 12ns
  • Access Time: 12 ns
  • Voltage - Supply: 3.15V ~ 3.45V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 208-LFBGA
  • Supplier Device Package: 208-CABGA (15x15)

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