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70T651S10BF

Renesas Electronics America Inc
70T651S10BF Preview
Renesas Electronics America Inc
IC SRAM 9MBIT PARALLEL 208FPBGA
$276.38
Available to order
Reference Price (USD)
14+
$160.08643
Exquisite packaging
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Renesas Electronics America Inc 70T651S10BF is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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70T651S10BF

70T651S10BF

$276.38

Product details

The 70T651S10BF memory IC by Renesas Electronics America Inc delivers cutting-edge storage technology for advanced computing applications. This high-performance solution combines speed, capacity, and reliability in a single package, addressing the growing demands of data-centric systems. Its architecture is optimized for both standalone and embedded memory applications. Product highlights include parallel processing support, multi-bank operation capability, and advanced data protection features. The 70T651S10BF offers excellent signal integrity at high frequencies, making it suitable for high-speed system designs. Its power-efficient operation extends battery life in portable applications while maintaining consistent performance. Target applications include neural network processors, cloud computing infrastructure, and high-frequency trading systems. The 70T651S10BF is also perfect for video processing equipment, scientific research instruments, and telecommunications base stations. Its capabilities extend to automotive vision systems and industrial quality inspection machines requiring real-time data analysis. To learn more about implementing this Renesas Electronics America Inc memory IC in your project, submit your requirements through our online platform. Our technical specialists will provide application-specific guidance and procurement options for the 70T651S10BF memory solution.

General specs

  • Product Status: Active
  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 9Mb (256K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ns
  • Access Time: 10 ns
  • Voltage - Supply: 2.4V ~ 2.6V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 208-LFBGA
  • Supplier Device Package: 208-CABGA (15x15)

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