70T633S10BF8

Renesas Electronics America Inc

General info

Manufacturer

Renesas Electronics America Inc

Description:

IC SRAM 9MBIT PARALLEL 208CABGA

PDF:

70T633S10BF8 PDF

$276.38

Available to order

Reference Price (USD)

1,000+

$132.21180

Exquisite packaging

Discount

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DHL / Fedex / UPS	2-5 days
TNT	2-6 days
EMS	3-7 days

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70T633S10BF8

$276.38

Product details

Discover the 70T633S10BF8 by Renesas Electronics America Inc, a high-efficiency memory IC engineered for next-generation computing platforms. This innovative solution delivers superior performance metrics, combining speed, capacity, and power optimization in a single package. Its architecture is tailored for both embedded and expandable memory applications. The 70T633S10BF8 features include dynamic frequency scaling, bank interleaving support, and thermal throttling capability. These advanced features enable optimal performance across various operating conditions. The memory IC offers excellent signal integrity at high speeds while maintaining low power consumption. Its design incorporates reliability enhancements for continuous operation. Ideal applications include hyperscale data centers, AI inference accelerators, and autonomous mobile robots. The 70T633S10BF8 is equally effective in virtual reality systems, genomic sequencing equipment, and quantum computing interfaces. Its capabilities extend to smart agriculture systems and renewable energy management platforms requiring high-performance memory solutions. To learn more about integrating this Renesas Electronics America Inc memory IC into your design, submit your inquiry through our online portal. Our application engineers will provide technical support and procurement options for the 70T633S10BF8, ensuring optimal memory performance for your specific requirements.