70T633S10BCI
Renesas Electronics America Inc
Renesas Electronics America Inc
IC SRAM 9MBIT PARALLEL 256CABGA
$304.06
Available to order
Reference Price (USD)
12+
$176.10583
Exquisite packaging
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70T633S10BCI
$304.06
Product details
The 70T633S10BCI from Renesas Electronics America Inc is a high-performance memory IC designed for demanding applications. This versatile memory solution offers reliable data storage and fast access times, making it ideal for a wide range of electronic systems. With its advanced architecture, the 70T633S10BCI ensures efficient operation in both industrial and commercial environments.
Key features include low power consumption, robust data retention, and seamless integration with various host systems. The memory IC supports multiple read/write operations without compromising performance, ensuring smooth operation in data-intensive scenarios. Its compact design allows for easy implementation in space-constrained applications while maintaining high reliability.
Applications span across industries, including automotive electronics for infotainment systems, industrial automation for data logging, and consumer electronics for smart devices. The 70T633S10BCI is also suitable for medical equipment requiring secure data storage and telecommunications infrastructure needing high-speed memory solutions.
For pricing and availability of this Renesas Electronics America Inc memory IC, please submit your inquiry through our online platform. Our team will provide you with competitive quotes and technical support to meet your project requirements.
General specs
- Product Status: Active
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Asynchronous
- Memory Size: 9Mb (512K x 18)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 10ns
- Access Time: 10 ns
- Voltage - Supply: 2.4V ~ 2.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 256-LBGA
- Supplier Device Package: 256-CABGA (17x17)
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