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2SD1579-T-AZ

Renesas
2SD1579-T-AZ Preview
Renesas
2SD1579-T-AZ - SMALL SIGNAL BIPO
$1.21
Available to order
Reference Price (USD)
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$1.21130
500+
$1.199187
1000+
$1.187074
1500+
$1.174961
2000+
$1.162848
2500+
$1.150735
Exquisite packaging
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Renesas 2SD1579-T-AZ is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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2SD1579-T-AZ

2SD1579-T-AZ

$1.21

Product details

Discover the 2SD1579-T-AZ, a high-efficiency Bipolar Junction Transistor from Renesas designed for precision electronic applications. As part of the Discrete Semiconductor Products range, this single BJT transistor offers excellent linearity and switching performance. The device features optimized electron mobility for enhanced signal fidelity in amplification circuits. Its symmetrical structure allows for flexible configuration in various circuit topologies. The 2SD1579-T-AZ demonstrates remarkable stability across temperature variations, ensuring consistent operation. Common implementations include voltage regulators, oscillator circuits, and impedance matching networks. Industrial automation, audio equipment, and power supply designs frequently incorporate this reliable transistor. The component's durable packaging protects against mechanical stress and environmental factors. With its straightforward integration and proven reliability, the 2SD1579-T-AZ simplifies circuit design challenges. Renesas's commitment to quality means you receive a product that meets rigorous industry standards. Interested in testing this BJT in your application? Request a quote through our online portal for prompt assistance from our sales team.

General specs

  • Product Status: Obsolete
  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 1.5 A
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
  • Current - Collector Cutoff (Max): 1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V
  • Power - Max: 1 W
  • Frequency - Transition: 60MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 3-SSIP
  • Supplier Device Package: -

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