2SC3380ASTR-E
Renesas
Renesas
2SC3380ASTR - SILICON NPN TRIPLE
$0.30
Available to order
Reference Price (USD)
1+
$0.30420
500+
$0.301158
1000+
$0.298116
1500+
$0.295074
2000+
$0.292032
2500+
$0.28899
Exquisite packaging
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2SC3380ASTR-E
$0.30
Product details
Enhance your electronic designs with the 2SC3380ASTR-E, a premium Bipolar Junction Transistor (BJT) from Renesas. This single BJT transistor belongs to the Discrete Semiconductor Products family and is engineered for optimal switching and amplification tasks. The 2SC3380ASTR-E features low saturation voltage and high current gain, ensuring efficient operation in diverse circuits. Its excellent thermal performance prevents overheating, even during prolonged use. The transistor's reliable switching speed makes it suitable for both analog and digital applications. Common uses include audio amplifiers, power regulators, and signal processing modules. Automotive systems, industrial controls, and consumer electronics can all benefit from this versatile component. The 2SC3380ASTR-E is designed to meet rigorous quality standards, providing long-term reliability. Compact and lightweight, it's perfect for space-constrained applications. Ready to incorporate this high-quality BJT into your next project? Contact us for more details and pricing options tailored to your needs.
General specs
- Product Status: Obsolete
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 300 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 20mA
- Current - Collector Cutoff (Max): 1µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 20V
- Power - Max: 1 W
- Frequency - Transition: 80MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: UPAK
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