2SA812B-T1B-AT
Renesas
Renesas
2SA812B-T1B-AT - PNP SILICON EPI
$0.07
Available to order
Reference Price (USD)
1+
$0.06718
500+
$0.0665082
1000+
$0.0658364
1500+
$0.0651646
2000+
$0.0644928
2500+
$0.063821
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2SA812B-T1B-AT
$0.07
Product details
The 2SA812B-T1B-AT from Renesas represents advanced Bipolar Junction Transistor technology in the Discrete Semiconductor Products category. This single BJT solution provides superior current amplification with minimal power loss, making it ideal for energy-sensitive designs. The transistor's optimized geometry reduces parasitic effects that can compromise circuit performance. Engineers value its predictable characteristics and tight parameter distribution across production lots. The 2SA812B-T1B-AT excels in both common-emitter and common-base configurations, offering design flexibility. Applications span from small-signal processing in consumer electronics to power management in industrial systems. Electric vehicle components, smart home devices, and test equipment manufacturers regularly specify this BJT. The device meets international safety and performance certifications, giving designers confidence in their selections. Its compatibility with automated assembly processes streamlines manufacturing workflows. Renesas backs the 2SA812B-T1B-AT with comprehensive technical support and reliable supply chain management. To discuss how this transistor can optimize your specific application, please submit your requirements through our online inquiry system.
General specs
- Product Status: Obsolete
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 1mA, 6V
- Power - Max: 200 mW
- Frequency - Transition: 180MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: 3-MINIMOLD
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