2SA1978-T1B-A
Renesas Electronics America Inc
Renesas Electronics America Inc
PNP TRANSISTOR
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2SA1978-T1B-A
$0.00
Product details
The 2SA1978-T1B-A by Renesas Electronics America Inc redefines expectations for RF BJT transistors in the discrete semiconductor products segment. This high-frequency bipolar transistor combines low saturation voltage with impressive current gain characteristics, optimized for efficient signal processing. Its multi-emitter structure enhances switching speed while maintaining linear amplification capabilities. The product incorporates proprietary passivation techniques that improve long-term reliability and moisture resistance. Design engineers will appreciate the predictable performance curves and well-characterized noise parameters. Key application areas include satellite communication ground stations requiring stable uplink/downlink conversion. In automotive systems, it enables precise signal conditioning for collision avoidance radar and vehicle-to-everything (V2X) communication modules. Industrial IoT applications benefit from its low-power operation in wireless sensor networks and edge computing devices. The 2SA1978-T1B-A also serves critical functions in marine navigation equipment and underwater communication systems. Its compatibility with automated pick-and-place manufacturing processes simplifies high-volume production integration. Renesas Electronics America Inc subjects each unit to extensive parametric testing and quality verification procedures. For engineers developing compact RF solutions, this transistor offers an optimal balance of performance and footprint efficiency. Access detailed SPICE models and reference designs through our technical portal. Connect with our regional sales representatives to discuss volume pricing options or request evaluation kits for the 2SA1978-T1B-A transistor series.
General specs
- Product Status: Obsolete
- Transistor Type: PNP
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 5.5GHz
- Noise Figure (dB Typ @ f): 2dB @ 1GHz
- Gain: 10dB
- Power - Max: 200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 15mA, 10V
- Current - Collector (Ic) (Max): 50mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT23-3 (TO-236)
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