Shopping cart

Subtotal: $0.00

2SA1977-T1B-A

Renesas Electronics America Inc
2SA1977-T1B-A Preview
Renesas Electronics America Inc
PNP TRANSISTOR
$1.83
Available to order
Reference Price (USD)
1+
$1.83000
500+
$1.8117
1000+
$1.7934
1500+
$1.7751
2000+
$1.7568
2500+
$1.7385
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Renesas Electronics America Inc 2SA1977-T1B-A is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
2SA1977-T1B-A

2SA1977-T1B-A

$1.83

Product details

The 2SA1977-T1B-A from Renesas Electronics America Inc is a high-performance RF Bipolar Junction Transistor (BJT) designed for demanding applications in the discrete semiconductor products category. This transistor excels in radio frequency amplification, offering reliable signal processing with excellent gain characteristics. Ideal for both low-noise and power amplification stages, it ensures stable operation across various frequency ranges. Key features include robust construction for thermal stability, optimized packaging for minimal parasitic effects, and consistent performance under variable load conditions. The 2SA1977-T1B-A is engineered to meet stringent industry standards, making it a trusted choice for RF circuit designers. Its versatile design supports easy integration into existing systems while maintaining high efficiency. Common applications include wireless communication base stations, automotive radar systems, and medical imaging equipment. For aerospace and defense projects, this transistor provides critical signal integrity in radar and satellite communications. In consumer electronics, it enhances performance in smart home devices and IoT connectivity solutions. To inquire about pricing and availability for your specific needs, contact our sales team today or submit an online quote request. Discover how the 2SA1977-T1B-A can optimize your RF designs with Renesas Electronics America Inc's proven technology.

General specs

  • Product Status: Obsolete
  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8.5GHz
  • Noise Figure (dB Typ @ f): 1.5dB @ 1GHz
  • Gain: 12dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 8V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT23-3 (TO-236)

Viewed products

Infineon Technologies

BFR181E6327

$0.00 (not set)
NXP USA Inc.

BFQ18A,115

$0.00 (not set)
onsemi

MCH4017-TL-H

$0.00 (not set)
Infineon Technologies

BFP740FESDH6327XTSA1

$0.00 (not set)
onsemi

NSVF5490SKT3G

$0.00 (not set)
MACOM Technology Solutions

MRF421

$0.00 (not set)
onsemi

EC4H09C-TL-H

$0.00 (not set)
Renesas

NE66219-T1-A

$0.00 (not set)
onsemi

KSP10BU

$0.00 (not set)
MACOM Technology Solutions

PH1090-350L

$0.00 (not set)
Top