Shopping cart

Subtotal: $0.00

RM5N800TI

Rectron USA
RM5N800TI Preview
Rectron USA
MOSFET N-CHANNEL 800V 5A TO220F
$0.67
Available to order
Reference Price (USD)
1+
$0.67000
500+
$0.6633
1000+
$0.6566
1500+
$0.6499
2000+
$0.6432
2500+
$0.6365
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Rectron USA RM5N800TI is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
RM5N800TI

RM5N800TI

$0.67

Product details

Enhance your electronic designs with the RM5N800TI single MOSFET transistor from Rectron USA, a premium Discrete Semiconductor Product in the Transistors - FETs, MOSFETs - Single classification. This power-efficient component excels in switching applications, delivering robust performance with minimal energy loss. The RM5N800TI features an optimized gate drive characteristic that ensures smooth operation across various voltage ranges. Its compact design doesn't compromise on power handling capabilities, making it suitable for space-constrained applications. Notable advantages include superior noise immunity, stable operation under varying load conditions, and enhanced electrostatic discharge protection. These qualities make the RM5N800TI particularly valuable for medical equipment, telecommunications infrastructure, and aerospace electronics. Implement this MOSFET in your next project involving DC-DC converters, load switches, or power distribution systems. The component's reliability and efficiency will significantly improve your system's overall performance. For engineers seeking quality MOSFET solutions, the RM5N800TI represents an excellent choice. Visit our website to request a quote or submit your inquiry directly through our online portal for prompt assistance.

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 50 V
  • FET Feature: -
  • Power Dissipation (Max): 32.4W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack

Viewed products

STMicroelectronics

STU6N60M2

$0.00 (not set)
Vishay Siliconix

SQJQ404E-T1_GE3

$0.00 (not set)
Vishay Siliconix

SI2323DDS-T1-BE3

$0.00 (not set)
Nexperia USA Inc.

PSMN4R3-30PL,127

$0.00 (not set)
Infineon Technologies

IPI180N10N3GXKSA1

$0.00 (not set)
onsemi

NTHL027N65S3HF

$0.00 (not set)
Rectron USA

RM35P30LD

$0.00 (not set)
Diodes Incorporated

DMP21D0UT-7

$0.00 (not set)
IXYS

IXTT68P20T

$0.00 (not set)
Vishay Siliconix

SIRA20BDP-T1-GE3

$0.00 (not set)
Top