Shopping cart

Subtotal: $0.00

RM12N100S8

Rectron USA
RM12N100S8 Preview
Rectron USA
MOSFET N-CHANNEL 100V 12A 8SOP
$0.38
Available to order
Reference Price (USD)
1+
$0.38000
500+
$0.3762
1000+
$0.3724
1500+
$0.3686
2000+
$0.3648
2500+
$0.361
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Rectron USA RM12N100S8 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
RM12N100S8

RM12N100S8

$0.38

Product details

Enhance your electronic designs with the RM12N100S8 single MOSFET transistor from Rectron USA, a premium Discrete Semiconductor Product in the Transistors - FETs, MOSFETs - Single classification. This power-efficient component excels in switching applications, delivering robust performance with minimal energy loss. The RM12N100S8 features an optimized gate drive characteristic that ensures smooth operation across various voltage ranges. Its compact design doesn't compromise on power handling capabilities, making it suitable for space-constrained applications. Notable advantages include superior noise immunity, stable operation under varying load conditions, and enhanced electrostatic discharge protection. These qualities make the RM12N100S8 particularly valuable for medical equipment, telecommunications infrastructure, and aerospace electronics. Implement this MOSFET in your next project involving DC-DC converters, load switches, or power distribution systems. The component's reliability and efficiency will significantly improve your system's overall performance. For engineers seeking quality MOSFET solutions, the RM12N100S8 represents an excellent choice. Visit our website to request a quote or submit your inquiry directly through our online portal for prompt assistance.

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 10mOhm @ 12A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 50 V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)

Viewed products

Renesas Electronics America Inc

H5N3011P80-E#T2

$0.00 (not set)
Vishay Siliconix

SI4842BDY-T1-GE3

$0.00 (not set)
Infineon Technologies

IPDD60R080G7XTMA1

$0.00 (not set)
onsemi

NDD60N900U1T4G

$0.00 (not set)
Toshiba Semiconductor and Storage

SSM3J351R,LXHF

$0.00 (not set)
Infineon Technologies

IPS105N03LG

$0.00 (not set)
Microchip Technology

APT10090BFLLG

$0.00 (not set)
Panjit International Inc.

PJL9436A_R2_00001

$0.00 (not set)
STMicroelectronics

STD9NM40N

$0.00 (not set)
Rectron USA

RM3010

$0.00 (not set)
Top