Shopping cart

Subtotal: $0.00

RM120N40T2

Rectron USA
RM120N40T2 Preview
Rectron USA
MOSFET N-CH 40V 120A TO220-3
$0.51
Available to order
Reference Price (USD)
1+
$0.51000
500+
$0.5049
1000+
$0.4998
1500+
$0.4947
2000+
$0.4896
2500+
$0.4845
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Rectron USA RM120N40T2 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
RM120N40T2

RM120N40T2

$0.51

Product details

Rectron USA's RM120N40T2 stands out in the Discrete Semiconductor Products market as a top-tier single MOSFET transistor in the Transistors - FETs, MOSFETs - Single segment. This component combines cutting-edge semiconductor technology with practical design features for superior electrical performance. The RM120N40T2 demonstrates exceptional characteristics including low gate charge, excellent switching behavior, and reliable overcurrent protection. These features translate to reduced power losses and extended device lifespan in your applications. The transistor's robust construction ensures stable operation in challenging environmental conditions, from temperature extremes to mechanical stress. Industrial engineers will appreciate its versatility in robotics control systems, welding equipment, and power tool applications. For consumer electronics, it's perfect for high-end audio systems, gaming consoles, and smart home devices. The RM120N40T2 also performs exceptionally in renewable energy applications such as solar inverters and wind turbine controls. With its balanced performance metrics, this MOSFET provides the ideal solution for your power management needs. Ready to incorporate this high-quality component into your designs? Submit your inquiry through our user-friendly online platform for quick response and competitive pricing options.

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 20 V
  • FET Feature: -
  • Power Dissipation (Max): 130W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3

Viewed products

Infineon Technologies

IRF2805PBF

$0.00 (not set)
Infineon Technologies

AUIRFSL6535

$0.00 (not set)
Infineon Technologies

IPP80N04S2L03AKSA1

$0.00 (not set)
Vishay Siliconix

SQJ422EP-T1_BE3

$0.00 (not set)
Infineon Technologies

SI4435DYTRPBF

$0.00 (not set)
Taiwan Semiconductor Corporation

TSM280NB06LCR RLG

$0.00 (not set)
Infineon Technologies

IPW60R190P6FKSA1

$0.00 (not set)
Sanken

DKI04103

$0.00 (not set)
Vishay Siliconix

SIHG24N65E-E3

$0.00 (not set)
Texas Instruments

CSD13383F4

$0.00 (not set)
Top