P3M06025K4
PN Junction Semiconductor
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PN Junction Semiconductor
SICFET N-CH 650V 97A TO247-4
$15.90
Available to order
Reference Price (USD)
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$15.90000
500+
$15.741
1000+
$15.582
1500+
$15.423
2000+
$15.264
2500+
$15.105
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Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 97A
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 15V
- Vgs(th) (Max) @ Id: 2.2V @ 50mA (Typ)
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): +20V, -8V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 326W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4L
- Package / Case: TO-247-4