P3D12020G2
PN Junction Semiconductor
PN Junction Semiconductor
DIODE SCHOTTKY 1200V 20A TO263-2
$12.41
Available to order
Reference Price (USD)
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$12.41000
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$12.2859
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$12.1618
1500+
$12.0377
2000+
$11.9136
2500+
$11.7895
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P3D12020G2
$12.41
Product details
Discover the versatility of PN Junction Semiconductor's P3D12020G2 single rectifier diode, engineered for precision power control in modern electronics. This component delivers efficient AC to DC conversion with minimal energy loss, thanks to its advanced semiconductor technology. The diode features excellent forward bias characteristics and reliable reverse voltage protection, ensuring stable operation in diverse circuit configurations. Its compact package design facilitates easy PCB integration while maintaining superior thermal properties. Common applications include solar power systems, uninterruptible power supplies, and audio amplification equipment. The P3D12020G2 performs exceptionally well in high-temperature environments, making it suitable for automotive under-hood applications. Other notable features include fast response times and consistent performance under varying load conditions. Electrical engineers will appreciate its reliability in critical power management tasks. To explore how this diode can enhance your designs, request product specifications and pricing information today.
General specs
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 49A (DC)
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 60 µA @ 650 V
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: TO-263-2
- Supplier Device Package: TO-263-2
- Operating Temperature - Junction: -55°C ~ 175°C (TJ)
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