P3D12005E2
PN Junction Semiconductor
PN Junction Semiconductor
DIODE SCHOTTKY 1200V 5A TO252-2
$4.50
Available to order
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$4.41
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$4.365
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$4.32
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$4.275
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P3D12005E2
$4.50
Product details
Optimize your power electronics with PN Junction Semiconductor's P3D12005E2 single rectifier diode, a high-efficiency solution for modern circuit designs. This diode features superior current handling capabilities combined with low power dissipation, making it ideal for energy-conscious applications. The P3D12005E2 demonstrates excellent performance in voltage clamping, freewheeling, and reverse polarity protection circuits. Its advanced semiconductor design ensures reliable operation in switching power supplies, DC-DC converters, and battery management systems. The component's thermal characteristics allow for operation in high ambient temperature environments without performance degradation. Common industry applications include electric vehicle charging systems, industrial motor drives, and photovoltaic inverters. Additional advantages include consistent forward voltage characteristics and robust surge protection. Engineers will appreciate the diode's reliability in mission-critical power conversion tasks. For detailed technical information and volume pricing options, contact our sales team today.
General specs
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 19A (DC)
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 44 µA @ 650 V
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: TO-252-2
- Supplier Device Package: TO-252-2
- Operating Temperature - Junction: -55°C ~ 175°C (TJ)
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