PJS6603_S2_00001
Panjit International Inc.
Panjit International Inc.
30V COMPLEMENTARY ENHANCEMENT MO
$0.45
Available to order
Reference Price (USD)
1+
$0.45000
500+
$0.4455
1000+
$0.441
1500+
$0.4365
2000+
$0.432
2500+
$0.4275
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
| DHL / Fedex / UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
Panjit International Inc. PJS6603_S2_00001 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
PJS6603_S2_00001
$0.45
Product details
Optimize your electronic designs with the PJS6603_S2_00001 MOSFET array from Panjit International Inc., a standout in the Discrete Semiconductor Products category. This transistor array, part of the Transistors - FETs, MOSFETs - Arrays subcategory, delivers superior performance in power switching applications. Its compact design and high efficiency make it a preferred choice for engineers seeking reliable solutions.\n\nThe PJS6603_S2_00001 boasts features such as low gate drive requirements, high current handling capacity, and minimal switching losses. The array format provides multiple FETs in one package, streamlining PCB layout and reducing component count. Enhanced thermal management ensures stable operation even under high load conditions.\n\nApplications for the PJS6603_S2_00001 include industrial automation, renewable energy systems, and automotive electronics. In industrial automation, it drives actuators and sensors with precision. Renewable energy systems leverage its efficiency for solar inverters and wind turbine controls. Automotive electronics benefit from its durability and performance in harsh conditions.\n\nInterested in the PJS6603_S2_00001? Contact us for a quote and discover how this MOSFET array can enhance your designs. Our experts are ready to support your technical and purchasing requirements.
General specs
- Product Status: Active
- FET Type: N and P-Channel Complementary
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 2.9A (Ta)
- Rds On (Max) @ Id, Vgs: 48mOhm @ 4.4A, 10V, 110mOhm @ 2.9A, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V, 9.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V, 396pF @ 15V
- Power - Max: 1.25W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6
- Supplier Device Package: SOT-23-6
Viewed products
