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PJQ5866A_R2_00001

Panjit International Inc.
PJQ5866A_R2_00001 Preview
Panjit International Inc.
60V DUAL N-CHANNEL ENHANCEMENT M
$0.91
Available to order
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$0.8918
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$0.8827
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$0.8736
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$0.8645
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Panjit International Inc. PJQ5866A_R2_00001 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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PJQ5866A_R2_00001

PJQ5866A_R2_00001

$0.91

Product details

Discover the PJQ5866A_R2_00001 from Panjit International Inc., a high-efficiency MOSFET array in the Discrete Semiconductor Products category. As part of the Transistors - FETs, MOSFETs - Arrays subcategory, this product is engineered for applications demanding high power density and reliability. Its advanced design ensures optimal performance in a wide range of electronic systems.\n\nThe PJQ5866A_R2_00001 features low on-resistance, fast switching characteristics, and excellent thermal stability. The array format simplifies circuit design by consolidating multiple FETs, reducing board space and improving system efficiency. With superior electrical performance, it meets the needs of high-performance applications.\n\nCommon uses include server power supplies, electric vehicle charging stations, and medical equipment. Server power supplies benefit from its high efficiency and reliability. EV charging stations utilize its robust performance for safe and fast charging. Medical equipment relies on its precision and durability for critical operations.\n\nGet started with the PJQ5866A_R2_00001 today. Request a quote to explore how this MOSFET array can meet your project requirements. Our support team is here to assist you every step of the way.

General specs

  • Product Status: Active
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 40A (Tc)
  • Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1574pF @ 25V
  • Power - Max: 1.7W (Ta), 56W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: DFN5060B-8

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