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PJQ4602_R1_00001

Panjit International Inc.
PJQ4602_R1_00001 Preview
Panjit International Inc.
30V COMPLEMENTARY ENHANCEMENT MO
$0.79
Available to order
Reference Price (USD)
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$0.79000
500+
$0.7821
1000+
$0.7742
1500+
$0.7663
2000+
$0.7584
2500+
$0.7505
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Panjit International Inc. PJQ4602_R1_00001 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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PJQ4602_R1_00001

PJQ4602_R1_00001

$0.79

Product details

The PJQ4602_R1_00001 by Panjit International Inc. is a versatile MOSFET array belonging to the Discrete Semiconductor Products family, specifically designed for Transistors - FETs, MOSFETs - Arrays. This product excels in applications requiring high-speed switching and efficient power handling, making it a go-to solution for modern electronics.\n\nNotable features of the PJQ4602_R1_00001 include a balanced trade-off between switching speed and power dissipation, excellent noise immunity, and a compact footprint. The array configuration integrates multiple transistors, offering design flexibility and space savings. Its robust construction ensures long-term reliability in various operating conditions.\n\nThis MOSFET array is ideal for use in LED lighting, battery management systems, and communication devices. In LED lighting, it enables precise dimming and power control. Battery management systems rely on its efficiency for charge and discharge cycles. Communication devices benefit from its fast switching and low interference.\n\nElevate your projects with the PJQ4602_R1_00001. Submit an inquiry now to learn more about pricing and technical specifications. Our team is committed to providing the best solutions for your needs.

General specs

  • Product Status: Active
  • FET Type: N and P-Channel Complementary
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta), 18.5A (Tc), 6.4A (Ta), 18A (Tc)
  • Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V, 31mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA, 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 343pF @ 15V, 870pF @ 15V
  • Power - Max: 2W (Ta), 17.8W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: DFN3030B-8

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