PCDH20120G1_T0_00601
Panjit International Inc.
Panjit International Inc.
1200V SIC SCHOTTKY BARRIER DIODE
$13.49
Available to order
Reference Price (USD)
1+
$13.49000
500+
$13.3551
1000+
$13.2202
1500+
$13.0853
2000+
$12.9504
2500+
$12.8155
Exquisite packaging
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PCDH20120G1_T0_00601
$13.49
Product details
The PCDH20120G1_T0_00601 from Panjit International Inc. represents a breakthrough in single rectifier diode technology, offering unmatched performance in power conversion applications. This diode features an innovative design that minimizes switching losses while maximizing current handling capacity. Its precision-engineered junction provides stable characteristics under varying load conditions, ensuring reliable operation in demanding environments. The PCDH20120G1_T0_00601 is particularly effective in high-voltage applications such as X-ray generators and electrostatic precipitators. Industrial automation systems benefit from its fast response times and consistent performance. Other key applications include railway traction systems, mining equipment, and oil field instrumentation. The diode's rugged construction meets military-grade specifications for shock and vibration resistance. With its combination of high efficiency and durability, the PCDH20120G1_T0_00601 is an excellent choice for critical power electronics. Request a sample today to experience its superior performance in your application.
General specs
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 20A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 180 µA @ 1200 V
- Capacitance @ Vr, F: 1023pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247AD-2
- Operating Temperature - Junction: -55°C ~ 175°C
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