MMDT2227A_R1_00001
Panjit International Inc.
Panjit International Inc.
COMPLEMENTARY NPN/PNP SMALL SIGN
$0.39
Available to order
Reference Price (USD)
1+
$0.39000
500+
$0.3861
1000+
$0.3822
1500+
$0.3783
2000+
$0.3744
2500+
$0.3705
Exquisite packaging
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MMDT2227A_R1_00001
$0.39
Product details
Panjit International Inc.'s MMDT2227A_R1_00001 represents a high-performance solution in Bipolar Junction Transistor (BJT) Arrays for Discrete Semiconductor Products. This advanced component integrates multiple transistors with precisely matched characteristics in a compact package. The MMDT2227A_R1_00001 delivers excellent current handling capacity with uniform performance across all elements. Its design emphasizes thermal stability and parameter consistency. The product features low noise operation for sensitive signal processing applications. With its high current gain, it ensures efficient circuit operation. The MMDT2227A_R1_00001 demonstrates reliable switching characteristics for diverse electronic systems. Medical diagnostic equipment benefits from its precise signal amplification. Consumer electronics utilize its space-saving design for compact devices. Industrial control systems employ its robust performance in harsh environments. The MMDT2227A_R1_00001 also serves critical functions in power distribution systems. Panjit International Inc. has implemented stringent quality control measures in production. The component's design facilitates optimal thermal management during operation. Its lead-free composition complies with global environmental regulations. Engineers value its consistent performance in both prototype and mass production scenarios. The MMDT2227A_R1_00001 offers a reliable solution for demanding electronic applications. Its versatility makes it suitable for various circuit design requirements. Contact us today through our online portal to inquire about pricing and availability for your projects.
General specs
- Product Status: Active
- Transistor Type: NPN, PNP Complementary
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 40V, 60V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA, 1.6V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 10nA, 50nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 225mW, 200mW
- Frequency - Transition: 300MHz, 200MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
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