Shopping cart

Subtotal: $0.00

BSS123_R1_00001

Panjit International Inc.
BSS123_R1_00001 Preview
Panjit International Inc.
SOT-23, MOSFET
$0.23
Available to order
Reference Price (USD)
1+
$0.23000
500+
$0.2277
1000+
$0.2254
1500+
$0.2231
2000+
$0.2208
2500+
$0.2185
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Panjit International Inc. BSS123_R1_00001 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
BSS123_R1_00001

BSS123_R1_00001

$0.23

Product details

Enhance your electronic designs with the BSS123_R1_00001 single MOSFET transistor from Panjit International Inc., a premium Discrete Semiconductor Product in the Transistors - FETs, MOSFETs - Single classification. This power-efficient component excels in switching applications, delivering robust performance with minimal energy loss. The BSS123_R1_00001 features an optimized gate drive characteristic that ensures smooth operation across various voltage ranges. Its compact design doesn't compromise on power handling capabilities, making it suitable for space-constrained applications. Notable advantages include superior noise immunity, stable operation under varying load conditions, and enhanced electrostatic discharge protection. These qualities make the BSS123_R1_00001 particularly valuable for medical equipment, telecommunications infrastructure, and aerospace electronics. Implement this MOSFET in your next project involving DC-DC converters, load switches, or power distribution systems. The component's reliability and efficiency will significantly improve your system's overall performance. For engineers seeking quality MOSFET solutions, the BSS123_R1_00001 represents an excellent choice. Visit our website to request a quote or submit your inquiry directly through our online portal for prompt assistance.

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3

Viewed products

STMicroelectronics

STP2N105K5

$0.00 (not set)
Diodes Incorporated

DMN33D8LTQ-7

$0.00 (not set)
Toshiba Semiconductor and Storage

TK3R2A08QM,S4X

$0.00 (not set)
Renesas Electronics America Inc

RJK0346DPA-01#J0B

$0.00 (not set)
onsemi

FDC8886

$0.00 (not set)
NXP USA Inc.

PHT6N06T,135

$0.00 (not set)
IXYS

IXKK85N60C

$0.00 (not set)
Fairchild Semiconductor

FQP2N50

$0.00 (not set)
Nexperia USA Inc.

BUK7Y3R5-40HX

$0.00 (not set)
onsemi

NTBV45N06T4G

$0.00 (not set)
Top