SSVMUN5312DW1T2G
onsemi
onsemi
TRANS PREBIAS 1NPN 1PNP 50V SC88
$0.00
Available to order
Reference Price (USD)
3,000+
$0.10660
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
| DHL / Fedex / UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
onsemi SSVMUN5312DW1T2G is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
SSVMUN5312DW1T2G
$0.00
Product details
The SSVMUN5312DW1T2G by onsemi is a high-quality pre-biased bipolar junction transistor (BJT) array, categorized under Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased. This product is designed to provide exceptional performance in various electronic applications, ensuring reliability and efficiency. The SSVMUN5312DW1T2G features integrated pre-biasing, which minimizes external components and simplifies design. Its excellent thermal stability guarantees consistent operation under diverse conditions. This BJT array is ideal for applications such as signal amplification, load switching, and interface circuits. The SSVMUN5312DW1T2G is also widely used in industrial automation, consumer electronics, and telecommunications. With its high gain and low noise performance, it is perfect for sensitive and precision-driven tasks. The compact and durable design of the SSVMUN5312DW1T2G makes it suitable for both high-volume and specialized applications. Engineers and designers can rely on this transistor array for its consistent quality and performance. For more information on the SSVMUN5312DW1T2G and to receive a customized quote, please submit an inquiry and our team will respond promptly.
General specs
- Product Status: Obsolete
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 22kOhms
- Resistor - Emitter Base (R2): 22kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 187mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-88/SC70-6/SOT-363
Viewed products
