SMUN2111T1G
onsemi
onsemi
TRANS PREBIAS PNP 50V 100MA SC59
$0.37
Available to order
Reference Price (USD)
3,000+
$0.06834
6,000+
$0.05943
15,000+
$0.05052
30,000+
$0.04754
75,000+
$0.04457
150,000+
$0.03962
Exquisite packaging
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SMUN2111T1G
$0.37
Product details
Optimized for space-constrained designs, the SMUN2111T1G pre-biased BJT from onsemi integrates critical biasing elements into a single package. This surface-mount device exhibits minimal leakage currents and consistent hFE characteristics across production batches. Its primary use cases involve power management in wearable devices, interface circuits for industrial sensors, and driver stages in low-voltage displays. The transistor's lead-free construction complies with global environmental standards, while its matte tin plating enhances solderability. Designers appreciate its predictable behavior in temperature-varying conditions, making it suitable for outdoor electronics. Explore volume discounts submit your requirements via our online portal for customized offers.
General specs
- Product Status: Active
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 10 kOhms
- Resistor - Emitter Base (R2): 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 230 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SC-59
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