NXH50C120L2C2ES1G
onsemi
onsemi
IGBT MOD 1200V 50A 26DIP
$77.88
Available to order
Reference Price (USD)
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$77.87667
500+
$77.0979033
1000+
$76.3191366
1500+
$75.5403699
2000+
$74.7616032
2500+
$73.9828365
Exquisite packaging
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NXH50C120L2C2ES1G
$77.88
Product details
Discover the NXH50C120L2C2ES1G transistor module by onsemi, a standout in the discrete semiconductor products category. This high-performance component is designed for fast switching and low energy consumption, making it ideal for modern electronics. Its compact and robust design ensures easy integration and long-lasting performance. The NXH50C120L2C2ES1G is commonly used in consumer electronics, such as televisions and gaming consoles, for efficient power management. It also plays a vital role in automotive electronics, enhancing vehicle safety and performance. Additionally, this transistor module is utilized in telecommunications equipment, ensuring reliable signal processing. If you re looking for a high-quality transistor module, the NXH50C120L2C2ES1G is an excellent choice. Contact us today to learn more and place your order.
General specs
- Product Status: Active
- IGBT Type: -
- Configuration: Three Phase Inverter with Brake
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 50 A
- Power - Max: 20 mW
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
- Current - Collector Cutoff (Max): 250 µA
- Input Capacitance (Cies) @ Vce: 11.89 nF @ 20 V
- Input: Three Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 26-PowerDIP Module (1.199", 47.20mm)
- Supplier Device Package: 26-DIP
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