NXH35C120L2C2SG
onsemi
onsemi
IGBT MODULE, CIB 1200 V, 35 A IG
$106.60
Available to order
Reference Price (USD)
1+
$106.60000
500+
$105.534
1000+
$104.468
1500+
$103.402
2000+
$102.336
2500+
$101.27
Exquisite packaging
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NXH35C120L2C2SG
$106.60
Product details
Experience superior performance with the NXH35C120L2C2SG transistor module by onsemi. This discrete semiconductor product is designed for high-speed switching and energy efficiency, making it a versatile choice for various applications. Its robust construction ensures reliability in challenging conditions. The NXH35C120L2C2SG is commonly used in power inverters, providing efficient energy conversion. It also excels in automotive ignition systems, enhancing engine performance. Additionally, this module is utilized in home appliances, improving energy savings and functionality. For designers and engineers seeking a high-quality transistor module, the NXH35C120L2C2SG is a perfect fit. Contact us today to inquire about pricing and availability, and take your projects to the next level.
General specs
- Product Status: Active
- IGBT Type: -
- Configuration: Three Phase Inverter with Brake
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 35 A
- Power - Max: 20 mW
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 35A
- Current - Collector Cutoff (Max): 250 µA
- Input Capacitance (Cies) @ Vce: 8.33 nF @ 20 V
- Input: Three Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 26-PowerDIP Module (1.199", 47.20mm)
- Supplier Device Package: 26-DIP
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