NXH200T120H3Q2F2SG
onsemi
onsemi
80KW GEN-II Q2PACK-200A MODULE
$133.17
Available to order
Reference Price (USD)
1+
$133.17167
500+
$131.8399533
1000+
$130.5082366
1500+
$129.1765199
2000+
$127.8448032
2500+
$126.5130865
Exquisite packaging
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NXH200T120H3Q2F2SG
$133.17
Product details
Experience superior performance with the NXH200T120H3Q2F2SG transistor module by onsemi. This discrete semiconductor product is designed for high-speed switching and energy efficiency, making it a versatile choice for various applications. Its robust construction ensures reliability in challenging conditions. The NXH200T120H3Q2F2SG is commonly used in power inverters, providing efficient energy conversion. It also excels in automotive ignition systems, enhancing engine performance. Additionally, this module is utilized in home appliances, improving energy savings and functionality. For designers and engineers seeking a high-quality transistor module, the NXH200T120H3Q2F2SG is a perfect fit. Contact us today to inquire about pricing and availability, and take your projects to the next level.
General specs
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 330 A
- Power - Max: 679 W
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 200A
- Current - Collector Cutoff (Max): 500 µA
- Input Capacitance (Cies) @ Vce: 35.615 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: 56-PIM/Q2PACK (93x47)
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