NXH100B120H3Q0STG
onsemi
onsemi
IGBT MODULE 1200V 50A 186W PIM22
$70.98
Available to order
Reference Price (USD)
1+
$70.97750
500+
$70.267725
1000+
$69.55795
1500+
$68.848175
2000+
$68.1384
2500+
$67.428625
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NXH100B120H3Q0STG
$70.98
Product details
Optimize your industrial systems with the NXH100B120H3Q0STG IGBT module by onsemi. This discrete semiconductor product is crafted for high-efficiency power conversion, offering unmatched reliability and performance. The module s innovative design reduces heat generation and enhances energy savings, making it suitable for continuous operation. Key applications include traction systems in railways, where consistent power delivery is essential. It is also widely used in medical imaging equipment, ensuring precise and stable operation. Additionally, the NXH100B120H3Q0STG is ideal for data center power supplies, providing uninterrupted energy flow. With its superior features and broad applicability, this IGBT module is a smart investment for any high-power application. Submit your inquiry now to learn more about how the NXH100B120H3Q0STG can meet your specific requirements.
General specs
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: 2 Independent
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 50 A
- Power - Max: 186 W
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
- Current - Collector Cutoff (Max): 200 µA
- Input Capacitance (Cies) @ Vce: 9.075 nF @ 20 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: 22-PIM/Q0BOOST (55x32.5)
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